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FET、MOSFET 阵列
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漏源电压 (Vdss)
电流 - 连续漏极 (Id) @ 25°C
输入电容 (Ciss)（最大值）@Vds
Rds On（最大）@Id、Vgs
栅极电荷 (Qg)（最大值）@Vgs
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Vgs(th)（最大值）@Id
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5,554 结果
制造商零件编号 数量 价格 系列 包装 状态 包装/箱 安装类型 配置 工作温度 技术 功率 - 最大 漏源电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 输入电容 (Ciss)（最大值）@Vds Rds On（最大）@Id、Vgs 栅极电荷 (Qg)（最大值）@Vgs 场效应管特性 Vgs(th)（最大值）@Id 供应商设备包 年级 资质
FF5MR20KM1HHPSA1
FF5MR20KM1HHPSA1
MOSFET
IR (Infineon Technologies)
10
In Stock
1 : ￥478.62
10 : ￥4,606.30
Tray
Tray
Active
 - - - - - - - - - - - - - - - -
F411MR12W2M1HPB76BPSA1
F411MR12W2M1HPB76BPSA1
MOSFET
IR (Infineon Technologies)
9
In Stock
1 : ￥216.99
18 : ￥3,740.94
36 : ￥7,316.64
Tray
Tray
Active
 - - - - - - - - - - - - - - - -
FS70UMJ-06F-REN
FS70UMJ-06F-REN
MOSFET N-CH 60V 70A
Intersil (Renesas Electronics Corporation)
3,486
Marketplace
91 : ￥303.03
Bulk
*
Bulk
Active
 - - - - - - - - - - - - - - - -
FDMS3606AS
FDMS3606AS
MOSFET 2N-CH 30V 13A/27A 8PQFN
Fairchild Semiconductor
7,184
Marketplace
254 : ￥302.26
Bulk
PowerTrench®
Bulk
Active
 8-PowerTDFN Surface Mount 2 N-Channel (Dual) Asymmetrical -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) 1W 30V 13A, 27A 1695pF @ 15V 8mOhm @ 13A, 10V 29nC @ 10V Logic Level Gate 2.7V @ 250µA 8-PQFN (5x6) - -
NTE2960
NTE2960
MOSFET 2N-CH 900V 7A TO220
NTE Electronics, Inc
98
Marketplace
1 : ￥8.63
10 : ￥82.00
20 : ￥155.40
50 : ￥367.00
100 : ￥716.00
Bag
Bag
Active
 TO-220-3 Full Pack Through Hole 2 N-Channel -55°C ~ 150°C MOSFET (Metal Oxide) 40W 900V 7A 1380pF @ 25V 2Ohm @ 3A, 10V - - 4V @ 1mA TO-220 Full Pack - -
BSM400D12P2G003
BSM400D12P2G003
SIC 2N-CH 1200V 400A MODULE
ROHM Semiconductor
4
In Stock
1 : ￥2,198.92
Bulk
Bulk
Active
 Module - 2 N-Channel (Half Bridge) -40°C ~ 150°C (TJ) Silicon Carbide (SiC) 2450W (Tc) 1200V (1.2kV) 400A (Tc) 38000pF @ 10V - - - 4V @ 85mA Module - -
TC8020K6-G
TC8020K6-G
MOSFET 6N/6P-CH 200V 56VQFN
Roving Networks (Microchip Technology)
500
In Stock
1 : ￥10.98
25 : ￥228.50
100 : ￥833.00
Tray
Tray
Active
 56-VFQFN Exposed Pad Surface Mount 6 N and 6 P-Channel -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) - 200V - 50pF @ 25V 8Ohm @ 1A, 10V - - 2.4V @ 1mA 56-QFN (8x8) - -
ALD210800SCL
ALD210800SCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
Advanced Linear Devices, Inc.
48
In Stock
1 : ￥7.24
50 : ￥289.00
100 : ￥517.00
500 : ￥2,280.00
1,000 : ￥4,100.00
2,000 : ￥7,700.00
Tube
EPAD®, Zero Threshold™
Tube
Active
 16-SOIC (0.154", 3.90mm Width) Surface Mount 4 N-Channel, Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V 80mA 15pF @ 5V 25Ohm - Logic Level Gate 20mV @ 10µA 16-SOIC - -
SLA5068
SLA5068
MOSFET 6N-CH 60V 7A 15ZIP
Sanken Electric Co., Ltd.
355
In Stock
1 : ￥9.40
10 : ￥80.60
180 : ￥1,207.80
Tube
Tube
Active
 15-SIP Exposed Tab, Formed Leads Through Hole 6 N-Channel (3-Phase Bridge) 150°C (TJ) MOSFET (Metal Oxide) 5W 60V 7A 660pF @ 10V 100mOhm @ 3.5A, 10V - - 2V @ 250µA 15-ZIP - -
SMA5117
SMA5117
MOSFET 6N-CH 250V 7A 12SIP
Sanken Electric Co., Ltd.
31
In Stock
1 : ￥18.01
10 : ￥158.60
Tube
Tube
Active
 12-SIP Through Hole 6 N-Channel (3-Phase Bridge) 150°C (TJ) MOSFET (Metal Oxide) 4W 250V 7A 850pF @ 10V 250mOhm @ 3.5A, 10V - - 4V @ 1mA 12-SIP - -