制造商零件编号 | 数量 | 价格 | 系列 | 包装 | 状态 | 包装/箱 | 安装类型 | 工作温度 | 技术 | 场效应管类型 | 电流 - 连续漏极 (Id) @ 25°C | Rds On(最大)@Id、Vgs | 场效应管特性 | 功耗(最大) | Vgs(th)(最大值)@Id | 供应商设备包 | 年级 | 驱动电压(最大导通电阻、最小导通电阻) | Vgs(最大) | 漏源电压 (Vdss) | 栅极电荷 (Qg)(最大值)@Vgs | 输入电容 (Ciss)(最大值)@Vds | 资质 |
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4-SIP | Through Hole | -55°C ~ 225°C (TJ) | MOSFET (Metal Oxide) | N-Channel | - | 400mOhm @ 100mA, 5V | - | 50W (Tj) | 2.4V @ 100µA | 4-Power Tab | - | 5V | 10V | 55 V | 4.3 nC @ 5 V | 290 pF @ 28 V | - |
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HTMOS™
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8-CDIP Exposed Pad | Through Hole | -55°C ~ 225°C (TJ) | MOSFET (Metal Oxide) | N-Channel | - | 400mOhm @ 100mA, 5V | - | 50W (Tj) | 2.4V @ 100µA | 8-CDIP-EP | - | 5V | 10V | 55 V | 4.3 nC @ 5 V | 290 pF @ 28 V | - |
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- | Through Hole | - | MOSFET (Metal Oxide) | N-Channel | - | 400mOhm @ 100mA, 5V | - | 50W (Tj) | 2.4V @ 100µA | - | - | 5V | 10V | 55 V | 4.3 nC @ 5 V | 290 pF @ 28 V | - |
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HTMOS™
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Active
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8-CDIP Exposed Pad | Through Hole | - | MOSFET (Metal Oxide) | N-Channel | - | 400mOhm @ 100mA, 5V | - | 50W (Tj) | 2.4V @ 100µA | - | - | 5V | 10V | 55 V | 4.3 nC @ 5 V | 290 pF @ 28 V | - |
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¥8,382.19
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