SMCC_Chip _integrated circuit IC_connector_passive device

单 FET、MOSFET

包装

切带 (CT)

包

卷带式 (TR)

大部分

托盘

条

盒子

管子

胶带和盒子 (TB)

状态

Active

Obsolete

Discontinued

Last Time Buy

Not For New Designs

安装类型

Chassis Mount

Surface Mount

Surface Mount, Wettable Flank

Through Hole

技术

GaNFET (Cascode Gallium Nitride FET)

GaNFET (Gallium Nitride)

MOSFET (Metal Oxide)

SiC (Silicon Carbide Junction Transistor)

SiCFET (Cascode SiCJFET)

SiCFET (Silicon Carbide)

场效应管类型

N-Channel

P-Channel

场效应管特性

Current Sensing

Depletion Mode

Logic Level Gate, 4V Drive

Schottky Diode (Body)

Schottky Diode (Isolated)

Temperature Sensing Diode

年级

Automotive

Military

制造商零件编号	数量	价格	系列	包装	状态	包装/箱	安装类型	工作温度	技术	场效应管类型	电流 - 连续漏极 (Id) @ 25°C	Rds On（最大）@Id、Vgs	场效应管特性	功耗（最大）	Vgs(th)（最大值）@Id	供应商设备包	年级	驱动电压（最大导通电阻、最小导通电阻）	Vgs（最大）	漏源电压 (Vdss)	栅极电荷 (Qg)（最大值）@Vgs	输入电容 (Ciss)（最大值）@Vds	资质
GSFA95R500 MOSFET, N-CH, SINGLE, 10.00A, 95 Good Ark Semiconductor 规格书	990 In Stock	1 : ￥4.26 10 : ￥35.70 100 : ￥289.00 500 : ￥1,285.00 1,000 : ￥2,200.00 2,000 : ￥4,140.00 5,000 : ￥9,950.00 Tube		Tube	Active	TO-247-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	10A (Tj)	500mOhm @ 5A, 10V	-	151W (Tj)	3.9V @ 250µA	TO-247	-	10V	±30V	950 V	24 nC @ 10 V	1568 pF @ 50 V	-
CDMSJ22029-650 SL SUPER JUNCTION MOSFETS Central Semiconductor 规格书	497 In Stock	1 : ￥5.19 50 : ￥205.50 100 : ￥353.00 500 : ￥1,570.00 1,000 : ￥2,680.00 2,000 : ￥5,060.00 Tube		Tube	Active	TO-220-3 Full Pack	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	29A (Tc)	130mOhm @ 10.8A, 10V	-	33W (Tc)	4V @ 250µA	TO-220FP	-	10V	30V	650 V	51 nC @ 10 V	1920 pF @ 400 V	-
XP65AN1K2IT MOSFET N-CH 650V 7A TO220CFM YAGEO XSEMI 规格书	1,000 In Stock	1 : ￥2.85 50 : ￥113.00 100 : ￥194.00 500 : ￥860.00 1,000 : ￥1,480.00 2,000 : ￥2,780.00 5,000 : ￥6,650.00 Tube	XP65AN1K2	Tube	Active	TO-220-3 Full Pack	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	7A (Tc)	1.2Ohm @ 3.5A, 10V	-	1.92W (Ta), 34.7W (Tc)	4V @ 250µA	TO-220CFM	-	10V	±30V	650 V	44.8 nC @ 10 V	2048 pF @ 100 V	-
TO220FMD10N65F MOSFET TO-220F N 650V 10A NextGen Components 规格书	19,255 Marketplace	1,000 : ￥1,660.00 Tube	TO-220F	Tube	Active	-	-	-	MOSFET (Metal Oxide)	N-Channel	10A (Tc)	1Ohm @ 5A, 10V	-	-	-	-	-	10V	±30V	650 V	34.2 nC @ 10 V	-	-
GSFH10120 MOSFET, N-CH, SINGLE, 180.00A, 1 Good Ark Semiconductor 规格书	942 In Stock	1 : ￥1.67 10 : ￥15.00 25 : ￥35.25 100 : ￥120.00 250 : ￥282.50 500 : ￥495.00 1,000 : ￥820.00 2,500 : ￥1,900.00 5,000 : ￥3,700.00 Tube		Tube	Active	TO-220-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	180A (Tc)	4.4mOhm @ 50A, 10V	-	208W (Tc)	3.9V @ 250µA	TO-220-3	-	10V	±20V	100 V	152 nC @ 10 V	8402 pF @ 50 V	-
TW015Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 1 Toshiba Electronic Devices and Storage Corporation 规格书	98 In Stock	1 : ￥61.33 30 : ￥1,616.70 120 : ￥6,021.60 Tube		Tube	Active	TO-247-4	Through Hole	175°C	SiC (Silicon Carbide Junction Transistor)	N-Channel	100A (Tc)	21mOhm @ 50A, 18V	-	431W (Tc)	5V @ 11.7mA	TO-247-4L(X)	-	18V	+25V, -10V	1200 V	158 nC @ 18 V	6000 pF @ 800 V	-
MSJP09N65A-BP N-CHANNEL MOSFET, TO-220AB(H) Micro Commercial Components (MCC) 规格书	5,000 In Stock	1 : ￥1.55 10 : ￥12.70 100 : ￥99.00 500 : ￥420.00 1,000 : ￥680.00 2,000 : ￥1,280.00 5,000 : ￥3,050.00 10,000 : ￥5,800.00 Tube		Tube	Active	TO-220-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	9A (Tc)	960mOhm @ 1.5A, 10V	-	113W (Tj)	4V @ 250µA	TO-220AB (H)	-	10V	±30V	650 V	10.6 nC @ 10 V	383 pF @ 30 V	-
R6020YNZ4C13 NCH 600V 20A, TO-247, POWER MOSF ROHM Semiconductor 规格书	600 In Stock	1 : ￥6.26 30 : ￥148.80 120 : ￥510.00 510 : ￥1,927.80 1,020 : ￥3,304.80 2,010 : ￥6,130.50 Tube		Tube	Active	TO-247-3	Through Hole	150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	20A (Tc)	185mOhm @ 6A, 12V	-	182W (Tc)	6V @ 1.65mA	TO-247	-	10V, 12V	±30V	600 V	28 nC @ 10 V	1200 pF @ 100 V	-
R6020YNX3C16 NCH 600V 20A, TO-220AB, POWER MO ROHM Semiconductor 规格书	975 In Stock	1 : ￥4.19 50 : ￥166.00 100 : ￥285.00 500 : ￥1,265.00 1,000 : ￥2,170.00 2,000 : ￥4,080.00 5,000 : ￥9,800.00 Tube		Tube	Active	TO-220-3	Through Hole	150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	20A (Tc)	185mOhm @ 6A, 12V	-	182W (Tc)	6V @ 1.65mA	TO-220AB	-	10V, 12V	±30V	600 V	28 nC @ 10 V	1200 pF @ 100 V	-
E3M0040120K SIC, MOSFET, 40M, 1200V, TO-247- Wolfspeed 规格书	316 In Stock	1 : ￥23.31 30 : ￥579.90 120 : ￥2,174.40 510 : ￥7,884.60 Tube	E	Tube	Active	TO-247-4	Through Hole	-55°C ~ 175°C (TJ)	SiC (Silicon Carbide Junction Transistor)	N-Channel	57A (Tc)	53mOhm @ 31.9A, 15V	-	242W	3.6V @ 8.77mA	TO-247-4L	Automotive	15V	+19V, -8V	1200 V	94 nC @ 15 V	2726 pF @ 1000 V	AEC-Q101

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单 FET、MOSFET

制造商

系列

包装

状态

包装/箱

安装类型

工作温度

技术

场效应管类型

电流 - 连续漏极 (Id) @ 25°C

Rds On（最大）@Id、Vgs

场效应管特性

功耗（最大）

Vgs(th)（最大值）@Id

供应商设备包

年级

驱动电压（最大导通电阻、最小导通电阻）

Vgs（最大）

漏源电压 (Vdss)

栅极电荷 (Qg)（最大值）@Vgs

输入电容 (Ciss)（最大值）@Vds

资质

库存选项

环境选项

媒体

市场产品