SMCC_Chip _integrated circuit IC_connector_passive device

单 FET、MOSFET

包装

切带 (CT)

包

卷带式 (TR)

大部分

托盘

条

盒子

管子

胶带和盒子 (TB)

状态

Active

Obsolete

Discontinued

Last Time Buy

Not For New Designs

安装类型

Chassis Mount

Surface Mount

Surface Mount, Wettable Flank

Through Hole

技术

GaNFET (Cascode Gallium Nitride FET)

GaNFET (Gallium Nitride)

MOSFET (Metal Oxide)

SiC (Silicon Carbide Junction Transistor)

SiCFET (Cascode SiCJFET)

SiCFET (Silicon Carbide)

场效应管类型

N-Channel

P-Channel

场效应管特性

Current Sensing

Depletion Mode

Logic Level Gate, 4V Drive

Schottky Diode (Body)

Schottky Diode (Isolated)

Temperature Sensing Diode

年级

Automotive

Military

制造商零件编号	数量	价格	系列	包装	状态	包装/箱	安装类型	工作温度	技术	场效应管类型	电流 - 连续漏极 (Id) @ 25°C	Rds On（最大）@Id、Vgs	场效应管特性	功耗（最大）	Vgs(th)（最大值）@Id	供应商设备包	年级	驱动电压（最大导通电阻、最小导通电阻）	Vgs（最大）	漏源电压 (Vdss)	栅极电荷 (Qg)（最大值）@Vgs	输入电容 (Ciss)（最大值）@Vds	资质
TO220FMD10N65F MOSFET TO-220F N 650V 10A NextGen Components 规格书	19,255 Marketplace	1,000 : ￥1,660.00 Tube	TO-220F	Tube	Active	-	-	-	MOSFET (Metal Oxide)	N-Channel	10A (Tc)	1Ohm @ 5A, 10V	-	-	-	-	-	10V	±30V	650 V	34.2 nC @ 10 V	-	-
NC1M120C75GTNG SiC MOSFET N 1200V 75mohm 47A 3 NextGen Components 规格书	2,400 Marketplace	100 : ￥2,685.00 Tube	NC1M	Tube	Active	TO-247-3	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	47A (Tc)	75mOhm @ 20A, 20V	-	288W (Ta)	2.8V @ 5mA	TO-247-3L	-	20V	+20V, -5V	1200 V	-	1450 pF @ 1000 V	-
NC1M120C40HTNG SiC MOSFET N 1200V 40mohm 75A 4 NextGen Components 规格书	2,400 Marketplace	100 : ￥3,685.00 Tube	NC1M	Tube	Active	TO-247-4	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	75A (Tc)	40mOhm @ 35A, 20V	-	366W (Ta)	2.8V @ 10mA	TO-247-4L	-	20V	+20V, -5V	1200 V	-	2534 pF @ 1000 V	-
TO220FMDD7N65F MOSFET TO-220F N 650V 7A NextGen Components 规格书	30,905 Marketplace	1,000 : ￥1,660.00 Tube	TO-220F	Tube	Active	-	-	-	MOSFET (Metal Oxide)	N-Channel	7A (Tc)	1.4Ohm @ 3.5A, 10V	-	-	-	-	-	10V	±30V	650 V	20.7 nC @ 10 V	-	-
NC1M120C75HTNG SiC MOSFET N 1200V 75mohm 47A 4 NextGen Components 规格书	2,400 Marketplace	100 : ￥2,685.00 Tube	NC1M	Tube	Active	TO-247-4	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	47A (Tc)	75mOhm @ 20A, 20V	-	288W (Ta)	2.8V @ 5mA	TO-247-4L	-	20V	+20V, -5V	1200 V	-	1450 pF @ 1000 V	-
NC1M120C40GTNG SiC MOSFET N 1200V 40mohm 76A 3 NextGen Components 规格书	2,400 Marketplace	100 : ￥3,685.00 Tube	NC1M	Tube	Active	TO-247-3	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	76A (Tc)	40mOhm @ 35A, 20V	-	375W (Ta)	2.8V @ 10mA	TO-247-3L	-	20V	+20V, -5V	1200 V	-	2534 pF @ 1000 V	-
TO220FMDD4N65F MOSFET TO-220F N 650V 4A NextGen Components 规格书	22,550 Marketplace	1,000 : ￥1,360.00 Tube	TO-220F	Tube	Active	-	-	-	MOSFET (Metal Oxide)	N-Channel	4A (Tc)	2.8Ohm @ 2A, 10V	-	-	-	-	-	10V	±30V	650 V	12 nC @ 10 V	-	-
TO220FMD12N65F MOSFET TO-220F N 650V 12A NextGen Components 规格书	6,750 Marketplace	1,000 : ￥1,760.00 Tube	TO-220F	Tube	Active	-	-	-	MOSFET (Metal Oxide)	N-Channel	12A (Tc)	0.8Ohm @ 6A, 10V	-	-	-	-	-	10V	±30V	650 V	41.9 nC @ 10 V	-	-
NC1M120C12HTNG SiC MOSFET N 1200V 12mohm 214A NextGen Components 规格书	2,400 Marketplace	100 : ￥8,685.00 Tube	NC1M	Tube	Active	TO-247-4	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	214A (Tc)	20mOhm @ 100A, 20V	-	938W (Ta)	3.5V @ 40mA	TO-247-4L	-	20V	+20V, -5V	1200 V	-	8330 pF @ 1000 V	-
NC1M120C75RRNG SiC MOSFET N 1200V 75mohm 46A 7 NextGen Components 规格书	2,400 Marketplace	100 : ￥2,585.00 Tape & Reel (TR)	NC1M	Tape & Reel (TR)	Active	TO-263-8, DPak (7 Leads + Tab)	Surface Mount	-55°C ~ 150°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	46A (Tc)	75mOhm @ 20A, 18V	-	240W (Ta)	2.3V @ 5mA	TO-263-7L	-	18V	+18V, -5V	1200 V	-	1402 pF @ 1000 V	-

PACKAGING	QUANTITY	UNIT PRICE	EXT PRICE
{{ p.name }}	{{ numberFormat(p.buyQty) }}	{{ priceFormat(p.unitPrice) }}	{{ priceFormat(p.totalPrice) }}
Total Amount: {{ priceFormat(quotes.total) }} (including {{ priceFormat(quotes.fee) }} fee)

单 FET、MOSFET

制造商

系列

包装

状态

包装/箱

安装类型

工作温度

技术

场效应管类型

电流 - 连续漏极 (Id) @ 25°C

Rds On（最大）@Id、Vgs

场效应管特性

功耗（最大）

Vgs(th)（最大值）@Id

供应商设备包

年级

驱动电压（最大导通电阻、最小导通电阻）

Vgs（最大）

漏源电压 (Vdss)

栅极电荷 (Qg)（最大值）@Vgs

输入电容 (Ciss)（最大值）@Vds

资质

库存选项

环境选项

媒体

市场产品